Invention Grant
US07642856B1 Amplifier capable of using a power supply voltage higher than its process voltages
有权
能够使用高于其工艺电压的电源电压的放大器
- Patent Title: Amplifier capable of using a power supply voltage higher than its process voltages
- Patent Title (中): 能够使用高于其工艺电压的电源电压的放大器
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Application No.: US11421053Application Date: 2006-05-30
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Publication No.: US07642856B1Publication Date: 2010-01-05
- Inventor: Manolis Terrovitis
- Applicant: Manolis Terrovitis
- Applicant Address: US CA Santa Clara
- Assignee: Atheros Communications, Inc.
- Current Assignee: Atheros Communications, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Bever, Hoffman & Harms, LLP
- Agent Jeanette S. Harms
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
An amplifier can advantageously use a power supply voltage source that provides a voltage greater than all breakdown voltages of the process associated with transistors of the amplifier. Specifically, cascoded configurations can be used to reduce the gate-drain and source-drain voltages of “at-risk” transistors in the amplifier. During a power down mode, a bias shunt of the amplifier can isolate certain nodes from the voltage sources. At the same time, a charge circuit of the amplifier can charge those nodes to a predetermined voltage, thereby minimizing stress to the at-risk transistors during the power down mode. A multi-flavor power down signal generator circuit can advantageously generate the appropriate power down signals for driving various transistors of the amplifier during the power down mode.
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