Invention Grant
US07642864B2 Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect
有权
影响NBTI(负偏压温度不稳定)效应和/或PBTI(正偏温度不稳定)效应的电路和设计结构
- Patent Title: Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect
- Patent Title (中): 影响NBTI(负偏压温度不稳定)效应和/或PBTI(正偏温度不稳定)效应的电路和设计结构
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Application No.: US12021459Application Date: 2008-01-29
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Publication No.: US07642864B2Publication Date: 2010-01-05
- Inventor: Ching-Te K. Chuang , Jae-Joon Kim , Tae-Hyoung Kim , Pong-Fei Lu , Saibal Mukhopadhyay , Rahul M. Rao , Shao-yi Wang
- Applicant: Ching-Te K. Chuang , Jae-Joon Kim , Tae-Hyoung Kim , Pong-Fei Lu , Saibal Mukhopadhyay , Rahul M. Rao , Shao-yi Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: G01R23/00
- IPC: G01R23/00 ; G01R27/00 ; G01R27/28 ; H03B5/24 ; H03K3/03

Abstract:
A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.
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