Invention Grant
- Patent Title: Methods and apparatus for electrostatic discharge protection in a semiconductor circuit
- Patent Title (中): 半导体电路中的静电放电保护方法和装置
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Application No.: US11426513Application Date: 2006-06-26
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Publication No.: US07643258B2Publication Date: 2010-01-05
- Inventor: Chun-Hsiang Lai , Chia-Ling Lu
- Applicant: Chun-Hsiang Lai , Chia-Ling Lu
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
An ESD protection circuit is adapted for an integrated circuit with a first power source and a second power source. The ESD protection circuit comprises a first silicon controlled rectifier (SCR), and in some embodiments a second silicon controlled rectifier, and a parasitic diode. The silicon rectifiers as well as the parasitic diode can all be formed using a single well formed in a substrate. Further, the ESD protection circuit can be used in systems that have multiple power sources regardless of the difference in voltage between the power sources.
Public/Granted literature
- US20060268478A1 Methods and Apparatus for Electrostatic Discharge Protection in a Semiconductor Circuit Public/Granted day:2006-11-30
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