Invention Grant
- Patent Title: Ferroelectric memory and operating method of same
- Patent Title (中): 铁电存储器及其操作方法相同
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Application No.: US11896343Application Date: 2007-08-31
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Publication No.: US07643325B2Publication Date: 2010-01-05
- Inventor: Shingo Hagiwara , Yoshiaki Kaneko , Amane Inoue , Akihito Kumagai , Isao Fukushi
- Applicant: Shingo Hagiwara , Yoshiaki Kaneko , Amane Inoue , Akihito Kumagai , Isao Fukushi
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Priority: JP2006-321775 20061129
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
A nonvolatile decision memory unit stores decision data indicating whether data stored in the normal memory cells is true or false. An inversion control circuit sets the inverting signal to a valid level with a predetermined probability. A write circuit writes data having logic which is inverse logic of data to be rewritten to the normal memory cells and writes decision data indicating false to the decision memory unit when the inverting signal indicates a valid level. Since inverse data is rewritten at a predetermined frequency, an imprint is prevented when a read operation is executed repetitively. Moreover, since frequent repeating of reverse polarization of the ferroelectric capacitor due to a rewrite operation is prevented, deterioration of the ferroelectric capacitor due to reverse polarization is minimized. Thus, occurrence of the imprint and deterioration of characteristics in the ferroelectric capacitor is prevented, and the reliability of the ferroelectric memory is improved.
Public/Granted literature
- US20080175034A1 Ferroelectric memory and operating method of same Public/Granted day:2008-07-24
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