Invention Grant
- Patent Title: Method for erasing flash memory
- Patent Title (中): 擦除闪存的方法
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Application No.: US12132153Application Date: 2008-06-03
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Publication No.: US07643352B2Publication Date: 2010-01-05
- Inventor: Chung Zen Chen
- Applicant: Chung Zen Chen
- Applicant Address: TW Hsinchu
- Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Connolly Bove Lodge & Hutz LLP
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method for erasing flash memory comprises the steps of: setting a critical ending condition; simultaneously erasing selected multiple sectors of the flash memory; stopping simultaneous erasing if one of the selected multiple sectors meets the critical ending condition; and erasing the remainder of each of the selected multiple sectors sequentially.
Public/Granted literature
- US20090296492A1 METHOD FOR ERASING FLASH MEMORY Public/Granted day:2009-12-03
Information query
