Invention Grant
- Patent Title: Nanophotonic devices in silicon
- Patent Title (中): 硅中的纳米光子器件
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Application No.: US12117480Application Date: 2008-05-08
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Publication No.: US07643714B2Publication Date: 2010-01-05
- Inventor: Michael J. Hochberg , Tom Baehr-Jones , Axel Scherer
- Applicant: Michael J. Hochberg , Tom Baehr-Jones , Axel Scherer
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Milstein Zhang & Wu LLC
- Agent Joseph B. Milstein
- Main IPC: G02B6/00
- IPC: G02B6/00 ; H01L21/00

Abstract:
Systems and methods for manipulating light with high index contrast waveguides clad with substances having that exhibit large nonlinear electro-optic constants χ2 and χ3. Waveguides fabricated on SOI wafers and clad with electro-optic polymers are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed. Designs having responsivity of less than 1 volt-centimeter are described.
Public/Granted literature
- US20090022445A1 NANOPHOTONIC DEVICES IN SILICON Public/Granted day:2009-01-22
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