Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US11414826Application Date: 2006-05-01
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Publication No.: US07644342B2Publication Date: 2010-01-05
- Inventor: Noboru Shibata
- Applicant: Noboru Shibata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Hogan & Hartson LLP
- Priority: JP2001-356571 20011121
- Main IPC: G06F11/10
- IPC: G06F11/10

Abstract:
An ECC circuit (103) is located between I/O terminals (1040-1047) and page buffers (1020-1027). The ECC circuit (103) includes a coder configured to generate check bits (ECC) for error correcting and attach the check bits to data to be written into a plurality of memory cell areas (1010-1017), and a decoder configured to employ the generated check bits (ECC) for error correcting the data read out from the memory cell areas (1010-1017). The ECC circuit (103) allocates a set of 40 check bits (ECC) to an information bit length of 4224=528×8 to execute coding and decoding by parallel processing 8-bit data, where data of 528 bits is defined as a unit to be written into and read out from one memory cell area (101j).
Public/Granted literature
- US20060195766A1 Semiconductor memory device Public/Granted day:2006-08-31
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