Invention Grant
US07644342B2 Semiconductor memory device 有权
半导体存储器件

Semiconductor memory device
Abstract:
An ECC circuit (103) is located between I/O terminals (1040-1047) and page buffers (1020-1027). The ECC circuit (103) includes a coder configured to generate check bits (ECC) for error correcting and attach the check bits to data to be written into a plurality of memory cell areas (1010-1017), and a decoder configured to employ the generated check bits (ECC) for error correcting the data read out from the memory cell areas (1010-1017). The ECC circuit (103) allocates a set of 40 check bits (ECC) to an information bit length of 4224=528×8 to execute coding and decoding by parallel processing 8-bit data, where data of 528 bits is defined as a unit to be written into and read out from one memory cell area (101j).
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