Invention Grant
- Patent Title: Semiconductor sensor for measuring a physical quantity and method of manufacturing the same
- Patent Title (中): 用于测量物理量的半导体传感器及其制造方法
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Application No.: US12010758Application Date: 2008-01-29
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Publication No.: US07644623B2Publication Date: 2010-01-12
- Inventor: Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
- Applicant: Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2007-019316 20070130; JP2007-031413 20070212
- Main IPC: G01L9/04
- IPC: G01L9/04

Abstract:
A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.
Public/Granted literature
- US20080202249A1 Semiconductor sensor and method of manufacturing the same Public/Granted day:2008-08-28
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