Invention Grant
US07644625B2 Differential pressure sense die based on silicon piezoresistive technology 有权
基于硅压阻技术的差压感应芯片

  • Patent Title: Differential pressure sense die based on silicon piezoresistive technology
  • Patent Title (中): 基于硅压阻技术的差压感应芯片
  • Application No.: US11956811
    Application Date: 2007-12-14
  • Publication No.: US07644625B2
    Publication Date: 2010-01-12
  • Inventor: Lamar F. Ricks
  • Applicant: Lamar F. Ricks
  • Applicant Address: US NJ Morristown
  • Assignee: Honeywell International Inc.
  • Current Assignee: Honeywell International Inc.
  • Current Assignee Address: US NJ Morristown
  • Agent Luis M. Ortiz; Kermit D. Lopez
  • Main IPC: G01L7/00
  • IPC: G01L7/00
Differential pressure sense die based on silicon piezoresistive technology
Abstract:
A method and apparatus for designing a differential pressure sense die based on a unique silicon piezoresistive technology for sensing low differential pressure in harsh duty applications is disclosed. The pressure sense die comprises of an etched pressure diaphragm and a hole that is drilled through the sense die wherein the pressure sense die possess a backside and a front side and are associated with varying pressures. A top cap can be attached to the front side and an optional constraint for stress relief can be attached to the backside of the differential pressure sense die. The top cap and the constraint comprise of glass and/or silicon and can be attached with an anodic bonding process or glass frit process.
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