Invention Grant
- Patent Title: Two-dimensional aperture array for vapor deposition
- Patent Title (中): 用于气相沉积的二维孔径阵列
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Application No.: US11333111Application Date: 2006-01-17
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Publication No.: US07645483B2Publication Date: 2010-01-12
- Inventor: Jeremy M. Grace , Michael Long
- Applicant: Jeremy M. Grace , Michael Long
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent Raymond L. Owens
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
A method for forming a layer on a surface in making a device, including providing a distribution member for receiving vaporized material, the distribution member having one or more walls defining a polygonal two-dimensional pattern of apertures is formed in a wall, which deliver vaporized material in a molecular flow onto the surface; providing the polygonal two-dimensional pattern of apertures to have at least four vertices, with a first set of apertures disposed at the vertices, a second set of edge apertures disposed between the apertures of the first set and defining the edges of the polygonal two-dimensional pattern, and a third set of interior apertures disposed within the periphery of the polygonal two-dimensional pattern defined by the first and second sets of apertures; and dimensioning the apertures to obtain a desired flow rate.
Public/Granted literature
- US20070163497A1 Two-dimensional aperture array for vapor deposition Public/Granted day:2007-07-19
Information query
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