Invention Grant
- Patent Title: Method for fine processing of substrate, method for fabrication of substrate, and light emitting device
- Patent Title (中): 基板的精细加工方法,基板的制造方法以及发光装置
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Application No.: US12294963Application Date: 2007-03-30
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Publication No.: US07645625B2Publication Date: 2010-01-12
- Inventor: Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
- Applicant: Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Chemical Company, Limited
- Current Assignee: Sumitomo Chemical Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin & Flannery
- Agent Kendrew H. Colton
- Priority: JP2006-097930 20060331
- International Application: PCT/JP2007/057700 WO 20070330
- International Announcement: WO2007/114503 WO 20071011
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching.
Public/Granted literature
- US20090114944A1 Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device Public/Granted day:2009-05-07
Information query
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