Invention Grant
- Patent Title: Method for manufacturing a sensor device
- Patent Title (中): 传感器装置的制造方法
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Application No.: US12011063Application Date: 2008-01-24
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Publication No.: US07645627B2Publication Date: 2010-01-12
- Inventor: John C. Christenson , Dan W. Chilcott , Richard G. Forestal , Jack L. Glenn , Seyed R. Zarabadi
- Applicant: John C. Christenson , Dan W. Chilcott , Richard G. Forestal , Jack L. Glenn , Seyed R. Zarabadi
- Applicant Address: US MI Troy
- Assignee: Delphi Technologies, Inc.
- Current Assignee: Delphi Technologies, Inc.
- Current Assignee Address: US MI Troy
- Agent Jimmy L. Funke
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A motion sensor in the form of an angular rate sensor and a method of making a sensor are provided and includes a support substrate and a silicon sensing ring supported by the substrate and having a flexive resonance. Drive electrodes apply electrostatic force on the ring to cause the ring to resonate. Sensing electrodes sense a change in capacitance indicative of vibration modes of resonance of the ring so as to sense motion. A plurality of silicon support rings connect the substrate to the ring. The support rings are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5 degrees and 67.5 degrees, with respect to the crystalline orientation of the silicon.
Public/Granted literature
- US20090191660A1 Method for manufacturing a sensor device Public/Granted day:2009-07-30
Information query
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