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US07645630B2 Manufacturing method for thin-film transistor 有权
薄膜晶体管的制造方法

Manufacturing method for thin-film transistor
Abstract:
It is an object of the present invention to provide an organic thin-film transistor exhibiting high carrier mobility and a manufacturing method thereof. Disclosed is an organic thin-film transistor possessing a film having a contact angle against pure water of a surface of not less than 50°, wherein an organic semiconductor layer is formed on the film prepared by a CVD (chemical vapor deposition) method employing a reactive gas.
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