Invention Grant
US07645644B2 Data line layout in semiconductor memory device and method of forming the same
有权
半导体存储器件中的数据线布局及其形成方法
- Patent Title: Data line layout in semiconductor memory device and method of forming the same
- Patent Title (中): 半导体存储器件中的数据线布局及其形成方法
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Application No.: US12113994Application Date: 2008-05-02
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Publication No.: US07645644B2Publication Date: 2010-01-12
- Inventor: Jong-Sun Sel , Jung-Dal Choi
- Applicant: Jong-Sun Sel , Jung-Dal Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2005-46897 20050601
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
In one aspect, a semiconductor device is provided which includes a data block including M parallel and sequentially arranged data lines numbered {0, 1, 2, . . . n, n+1, . . . , m−1, m}, where M, n and m are positive integers, and where n
Public/Granted literature
- US20080206932A1 DATA LINE LAYOUT IN SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2008-08-28
Information query
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