Invention Grant
- Patent Title: Method for fabricating pixel structure
- Patent Title (中): 制造像素结构的方法
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Application No.: US12242938Application Date: 2008-10-01
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Publication No.: US07645649B1Publication Date: 2010-01-12
- Inventor: Che-Yung Lai , Zong-Long Jhang , Chia-Chi Tsai , Chen-Pang Tung , Chia-Ming Chang , Chun-Yi Chiang , Chou-Huan Yu , Hsiang-Chih Hsiao , Han-Tang Chou , Jun-Kai Chang , Ta-Wen Liao
- Applicant: Che-Yung Lai , Zong-Long Jhang , Chia-Chi Tsai , Chen-Pang Tung , Chia-Ming Chang , Chun-Yi Chiang , Chou-Huan Yu , Hsiang-Chih Hsiao , Han-Tang Chou , Jun-Kai Chang , Ta-Wen Liao
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW97125584A 20080707
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A pixel structure fabricating method is provided. A gate and a gate insulation layer covering the gate are formed on a substrate. A channel layer is formed on the gate insulation layer. A conductive layer is formed on the channel layer and gate insulation layer. A black matrix having a color filer layer accommodating opening is formed on the conductive layer. The black matrix includes a first block and a second block which is thicker than the first block. The conductive layer is patterned with the black matrix as a mask to form a source and a drain on the channel layer. A color filter layer is formed within the color filter layer accommodating opening through inkjet printing. A dielectric layer is formed on the black matrix and color filter layer. The dielectric layer is patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.
Public/Granted literature
- US20100003792A1 METHOD FOR FABRICATING PIXEL STRUCTURE Public/Granted day:2010-01-07
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