Invention Grant
US07645657B2 MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation
有权
MOS晶体管和用SiON蚀刻停止层形成MOS晶体管的方法，其保护晶体管不受PID和热载流子劣化
- Patent Title: MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation
- Patent Title (中): MOS晶体管和用SiON蚀刻停止层形成MOS晶体管的方法，其保护晶体管不受PID和热载流子劣化
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Application No.: US12001370Application Date: 2007-12-10
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Publication No.: US07645657B2Publication Date: 2010-01-12
- Inventor: Douglas Brisbin , Prasad Chaparala , Denis Finbarr O'Connell , Heather McCulloh , Sergei Drizlikh
- Applicant: Douglas Brisbin , Prasad Chaparala , Denis Finbarr O'Connell , Heather McCulloh , Sergei Drizlikh
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Mark C. Pickering
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiH4 at a first flow rate, and the second SiON layer is formed with SiH4 at a second higher flow rate.
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