Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate

Invention Grant

US07645660B2 Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate 有权

Title translation: 用于制造集成在半导体衬底上的高稳定性电阻器，例如高欧姆多晶硅电阻器的方法

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Patent Title: Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate
Patent Title (中): 用于制造集成在半导体衬底上的高稳定性电阻器，例如高欧姆多晶硅电阻器的方法
Application No.: US11314194

Application Date: 2005-12-21
Publication No.: US07645660B2

Publication Date: 2010-01-12
Inventor: Olivier Le Neel , Olivier Girard , Fabio Ferrari
Applicant: Olivier Le Neel , Olivier Girard , Fabio Ferrari
Applicant Address: US TX Carrollton FR
Assignee: STMicroelectronics, Inc.,STMicroelectronics SA
Current Assignee: STMicroelectronics, Inc.,STMicroelectronics SA
Current Assignee Address: US TX Carrollton FR
Agent David V. Carlson; Lisa K. Jorgenson
Main IPC: H01L21/8238
IPC: H01L21/8238

Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate

Abstract:

A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.

Abstract(Chinese):

用于保护半导体衬底上的电路部件的等离子体蚀刻或其它去除工艺的方法包括在辅助层上形成屏蔽层，以隐藏至少覆盖电路部件的至少一部分的辅助层的区域，例如高欧姆多晶硅电阻器。该方法通过根据图案选择性地去除屏蔽层的部分，将由掩模限定的图案转印到筛选层上。辅助层的不受屏蔽层保护的部分使用对辅助层材料选择性的等离子体气体来去除，而不去除覆盖电路部件部分的辅助层的区域，从而保护电路部件免受等离子体气体通过屏蔽层和辅助层。

Public/Granted literature

US20070141848A1 Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate Public/Granted day:2007-06-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS