Invention Grant
US07645674B2 Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode
有权
具有形成在元件区域的半导体衬底侧壁上和栅电极的侧壁上的氧化膜的半导体器件
- Patent Title: Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode
- Patent Title (中): 具有形成在元件区域的半导体衬底侧壁上和栅电极的侧壁上的氧化膜的半导体器件
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Application No.: US11835353Application Date: 2007-08-07
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Publication No.: US07645674B2Publication Date: 2010-01-12
- Inventor: Toshitake Yaegashi , Junichi Shiozawa
- Applicant: Toshitake Yaegashi , Junichi Shiozawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-009252 20050117
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A first isolation is formed on a semiconductor substrate, and a first element region is isolated via the first isolation. A first gate insulating film is formed on the first element region, and a first gate electrode is formed on the first gate insulating film. A second isolation is formed on the semiconductor substrate, and a second element region is isolated via the second isolation. A second gate insulating film is formed on the second element region, and a second gate electrode is formed on the second gate insulating film. A first oxide film is formed between the first isolation and the first element region. A second oxide film is formed between the second isolation and the second element region. The first isolation has a width narrower than the second isolation, and the first oxide film has a thickness thinner than the second oxide film.
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