Invention Grant
- Patent Title: Method for producing a thin IC chip using negative pressure
- Patent Title (中): 使用负压制造薄IC芯片的方法
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Application No.: US11377273Application Date: 2006-03-17
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Publication No.: US07645685B2Publication Date: 2010-01-12
- Inventor: Masaharu Ishizuka , Shigeru Shoji
- Applicant: Masaharu Ishizuka , Shigeru Shoji
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention relates to a method for bonding a first thin plate having a first adhesion surface and a first back surface and a second thin plate having a second adhesion surface and a second back surface by an adhesive, the adhesive being sandwiched between said first adhesion surface and said second adhesion surface. The method comprises the steps of: applying said adhesive to said second adhesion surface of said second thin plate; holding said first thin plate by applying negative pressure to said first back surface, wherein said first thin plate is held at said first back surface, and said first adhesion surface faces downward; holding said second thin plate by applying negative pressure to said second back surface, wherein said second thin plate is held at said second back surface, and said second adhesion surface faces upward; temporarily bonding said first thin plate and said second thin plate by putting said first and second adhesion surfaces into contact with each other, wherein said first thin plate and said second thin plate are held by negative pressure; and bonding said first thin plate and said second thin plate by curing said adhesive, wherein said first thin plate and said second thin plate are temporarily bonded.
Public/Granted literature
- US20070218648A1 Method for producing a thin IC chip using negative pressure Public/Granted day:2007-09-20
Information query
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