Method of manufacturing a semiconductor element

Invention Grant

US07645695B2 Method of manufacturing a semiconductor element 失效

Title translation: 制造半导体元件的方法

Please log in to see more content

Patent Title: Method of manufacturing a semiconductor element
Patent Title (中): 制造半导体元件的方法
Application No.: US11730665

Application Date: 2007-04-03
Publication No.: US07645695B2

Publication Date: 2010-01-12
Inventor: Jun-hwan Oh , Hong-seong Son , Sang-min Lee , Ju-hyuck Chung
Applicant: Jun-hwan Oh , Hong-seong Son , Sang-min Lee , Ju-hyuck Chung
Applicant Address: KR Suwon-si, Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si, Gyeonggi-do
Agency: Lee & Morse, P.C.
Priority: KR10-2006-0030291 20060403
Main IPC: H01L21/4763
IPC: H01L21/4763

Abstract:

A method of manufacturing a semiconductor element, includes forming a lower metal wiring layer and an interlayer insulating film on a substrate, forming an opening through the interlayer insulating film, such that the opening is in communication with an upper surface of the lower metal wiring layer, cleaning the opening, forming a metal wiring line protecting film in the opening, such that the metal wiring line protecting film covers the lower metal wiring layer, washing the opening to remove the metal wiring line protecting film, such that a top surface of the lower metal wiring layer is exposed, and drying the substrate.

Abstract(Chinese):

一种半导体元件的制造方法，其特征在于，在基板上形成下部金属布线层和层间绝缘膜，通过所述层间绝缘膜形成开口，使得所述开口与所述下部金属布线层的上表面连通，清洗开口，在开口中形成金属布线保护膜，使得金属布线保护膜覆盖下金属布线层，清洗开口以除去金属布线保护膜，使得金属布线保护膜的顶表面下金属布线层露出，干燥基板。

Public/Granted literature

US20070232064A1 Method of manufacturing a semiconductor element Public/Granted day:2007-10-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）