Methods of depositing thin seed layers that improve continuity of the seed layer as well as adhesion to the barrier layer are provided. According to various embodiments, the methods involve performing an etchback operation in the seed deposition chamber prior to depositing the seed layer. The etch step removes barrier layer overhang and/or oxide that has formed on the barrier layer. It some embodiments, a small deposition flux of seed atoms accompanies the sputter etch flux of argon ions, embedding metal atoms into the barrier layer. The embedded metal atoms create nucleation sites for subsequent seed layer deposition, thereby promoting continuous seed layer film growth, film stability and improved seed layer-barrier layer adhesion.