A method for chemical mechanical polishing of mirror structures. Such mirror structures may be used for displays (e.g., LCOS, DLP), optical devices, and the like. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method forms a first dielectric layer overlying the semiconductor substrate and forms an aluminum layer overlying the dielectric layer. The aluminum layer has a predetermined roughness of greater than 20 Angstroms RMS. The method patterns the aluminum layer to expose portions of the dielectric layer. The method includes forming a second dielectric layer overlying the patterned aluminum layer and exposed portions of the dielectric layer. The method removes a portion of the second dielectric layer. The method processes regions overlying the patterned aluminum layer using a touch-up polishing process to reduce a surface roughness of the patterned aluminum to less than 5 Angstroms and eliminate the dielectric residue overlaying the patterned aluminum to form a mirror surface on the patterned aluminum.