Invention Grant
- Patent Title: Substrate inspection method, method of manufacturing semiconductor device, and substrate inspection apparatus
- Patent Title (中): 基板检查方法,半导体装置的制造方法以及基板检查装置
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Application No.: US11137473Application Date: 2005-05-26
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Publication No.: US07645988B2Publication Date: 2010-01-12
- Inventor: Ichirota Nagahama , Yuichiro Yamazaki , Atsushi Onishi
- Applicant: Ichirota Nagahama , Yuichiro Yamazaki , Atsushi Onishi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2004-159089 20040528
- Main IPC: G21K7/00
- IPC: G21K7/00

Abstract:
A substrate inspection method includes: generating an electron beam and irradiating the electron beam as a primary electron beam to a substrate as a specimen; inducing at least any of a secondary electron, a reflected electron and a backscattering electron which are emitted from the substrate receiving the primary electron beam, and magnifying and projecting the induced electron as a secondary electron beam so as to form an image of the secondary electron beam; a trajectory of the primary electron beam and a trajectory of the secondary electron beam having an overlapping space and space charge effect of the secondary electron beam occurring in the overlapping space, detecting the image of the secondary electron beam to output a signal representing a state of the substrate; and suppressing aberration caused by the space charge effect in the overlapping space.
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