Invention Grant
US07646007B2 Silver-selenide/chalcogenide glass stack for resistance variable memory
有权
用于电阻变量记忆的硒化银/硫族化物玻璃堆叠
- Patent Title: Silver-selenide/chalcogenide glass stack for resistance variable memory
- Patent Title (中): 用于电阻变量记忆的硒化银/硫族化物玻璃堆叠
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Application No.: US11585259Application Date: 2006-10-24
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Publication No.: US07646007B2Publication Date: 2010-01-12
- Inventor: Kristy A. Campbell , John T. Moore
- Applicant: Kristy A. Campbell , John T. Moore
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100−x composition.
Public/Granted literature
- US20070102691A1 Silver-selenide/chalcogenide glass stack for resistance variable memory Public/Granted day:2007-05-10
Information query
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