Invention Grant
- Patent Title: Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode
- Patent Title (中): 磷化磷基化合物半导体器件及其制造方法和发光二极管
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Application No.: US10535821Application Date: 2003-11-27
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Publication No.: US07646040B2Publication Date: 2010-01-12
- Inventor: Takashi Udagawa
- Applicant: Takashi Udagawa
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2002-344828 20021128
- International Application: PCT/JP03/15180 WO 20031127
- International Announcement: WO2004/049451 WO 20040610
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/205
Abstract:
A boron phosphide-based semiconductor device having a junction structure of a Group-III nitride semiconductor layer and a boron phosphide layer with excellent device properties is provided. The boron phosphide-based compound semiconductor device has a heterojunction structure comprising a Group-III nitride semiconductor layer and a boron phosphide layer, wherein the surface of the Group-III nitride semiconductor layer has (0.0.0.1.) crystal plane, and the boron phosphide layer is a {111}-boron phosphide layer having a {111} crystal plane stacked on the (0.0.0.1.) crystal plane of the Group-III nitride semiconductor layer in parallel to the (0.0.0.1.) crystal plane.
Public/Granted literature
- US20060097358A1 Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode Public/Granted day:2006-05-11
Information query
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