Invention Grant
- Patent Title: Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same
- Patent Title (中): 包括垂直通道的非易失性存储器件,操作方法及其制造方法
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Application No.: US11999135Application Date: 2007-12-04
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Publication No.: US07646041B2Publication Date: 2010-01-12
- Inventor: Soo-Doo Chae , Chung-Woo Kim , Chan-Jin Park , Jeong-Hee Han , Byung-Gook Park , Il-Han Park
- Applicant: Soo-Doo Chae , Chung-Woo Kim , Chan-Jin Park , Jeong-Hee Han , Byung-Gook Park , Il-Han Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2006-0121228 20061204; KR10-2007-0095665 20070920; KR10-2007-0123002 20071129
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A flash memory device can include a semiconductor fin protruding from a semiconductor substrate of a first conductive type to extend in one direction, a first doped layer and a second doped layer provided to an upper portion and a lower portion of the semiconductor fin, respectively, to be vertically spaced apart from each other, the first and second doped layers having a second conductive type, and a plurality of word lines extending over a top and a sidewall of the semiconductor fin to intersect the direction. The word lines overlap the first doped layer and the second doped layer to have vertical channels.
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