Invention Grant
US07646041B2 Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same 有权
包括垂直通道的非易失性存储器件,操作方法及其制造方法

Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same
Abstract:
A flash memory device can include a semiconductor fin protruding from a semiconductor substrate of a first conductive type to extend in one direction, a first doped layer and a second doped layer provided to an upper portion and a lower portion of the semiconductor fin, respectively, to be vertically spaced apart from each other, the first and second doped layers having a second conductive type, and a plurality of word lines extending over a top and a sidewall of the semiconductor fin to intersect the direction. The word lines overlap the first doped layer and the second doped layer to have vertical channels.
Information query
Patent Agency Ranking
0/0