Invention Grant
US07646042B2 Charge coupled device and solid-state imaging apparatus 有权
电荷耦合器件和固态成像设备

Charge coupled device and solid-state imaging apparatus
Abstract:
When capacity coupling between an output gate electrode (OG) and a last-stage transfer electrode is large at an output end of a CCD shift register, an electric potential of the OG is varied according to transfer clocks with the result that noise is liable to generate in an output signal. As measures for this, convex portions projecting horizontally are formed in those positions of the last-stage transfer electrode and the OG, which correspond to a channel region, and overlap between the electrodes is caused only on the convex portions. A clearance is formed between the OG and the transfer electrode except those locations, in which the convex portions are provided. In that location, in which the OG and the transfer electrode, respectively, are extended relatively lengthily toward wirings, the electrodes do not overlap each other. In this manner, capacity coupling between the electrodes is reduced.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/06 ..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062 ...只是金属—绝缘体—半导体型势垒的
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