Invention Grant
- Patent Title: Charge coupled device and solid-state imaging apparatus
- Patent Title (中): 电荷耦合器件和固态成像设备
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Application No.: US11334364Application Date: 2006-01-19
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Publication No.: US07646042B2Publication Date: 2010-01-12
- Inventor: Takahiko Ogo
- Applicant: Takahiko Ogo
- Applicant Address: JP Moriguchi-shi
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi-shi
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-015197 20050124
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
When capacity coupling between an output gate electrode (OG) and a last-stage transfer electrode is large at an output end of a CCD shift register, an electric potential of the OG is varied according to transfer clocks with the result that noise is liable to generate in an output signal. As measures for this, convex portions projecting horizontally are formed in those positions of the last-stage transfer electrode and the OG, which correspond to a channel region, and overlap between the electrodes is caused only on the convex portions. A clearance is formed between the OG and the transfer electrode except those locations, in which the convex portions are provided. In that location, in which the OG and the transfer electrode, respectively, are extended relatively lengthily toward wirings, the electrodes do not overlap each other. In this manner, capacity coupling between the electrodes is reduced.
Public/Granted literature
- US20060163620A1 Charge coupled device and solid-state imaging apparatus Public/Granted day:2006-07-27
Information query
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