Invention Grant
- Patent Title: Memory cell storage node length
- Patent Title (中): 存储单元存储节点长度
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Application No.: US11870128Application Date: 2007-10-10
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Publication No.: US07646053B2Publication Date: 2010-01-12
- Inventor: Hussein I. Hanafi
- Applicant: Hussein I. Hanafi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
Methods, devices, and systems for a memory cell are provided. One embodiment includes a memory cell with a storage node separated from a body region by a first dielectric, wherein the body region includes a channel separating a source and a drain region, and wherein a length of the storage node is less than a length of the channel. The embodiment further includes a memory cell with a gate separated from the storage node by a second dielectric, wherein a length of the gate is greater than a length of the storage node.
Public/Granted literature
- US20090097310A1 MEMORY CELL STORAGE NODE LENGTH Public/Granted day:2009-04-16
Information query
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