Transistor structures for relatively even current balancing within a device and methods for fabricating the same are disclosed. These devices can be used in relatively compact MOSFET Electrostatic Discharge (ESD) protection structures, such as in snapback devices. One embodiment utilizes a salisided exclusion layer for segmentation of the source and/or drain diffusion areas, while the others utilize poly for segmentation of the source and/or drain area. Also, diffusion is used generically herein and, for example, includes implants. These techniques provide relatively good ESD tolerance while consuming a relatively small amount of area, and provide significant area and parasitic capacitance reduction over the state of the art without sacrificing ESD performance. These techniques are also applicable to current balancing within relatively high current devices, such as drivers.