Invention Grant
- Patent Title: Ferroelectric capacitor and ferroelectric memory
- Patent Title (中): 铁电电容器和铁电存储器
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Application No.: US11680111Application Date: 2007-02-28
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Publication No.: US07646073B2Publication Date: 2010-01-12
- Inventor: Yasuaki Hamada
- Applicant: Yasuaki Hamada
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-062377 20060308
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A ferroelectric capacitor includes: a base substrate; a buffer layer formed above the base substrate; a lower electrode formed above the buffer layer; a ferroelectric layer formed above the lower electrode; and an upper electrode formed above the ferroelectric layer, wherein the buffer layer includes titanium (Ti) and cobalt (Co) as metal elements, and a metal element ratio x is 0.05≦x
Public/Granted literature
- US20070210361A1 FERROELECTRIC CAPACITOR AND FERROELECTRIC MEMORY Public/Granted day:2007-09-13
Information query
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