Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11566879Application Date: 2006-12-05
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Publication No.: US07646092B2Publication Date: 2010-01-12
- Inventor: Hiroshi Saitoh , Toshihisa Suzuki , Shingo Sakakibara
- Applicant: Hiroshi Saitoh , Toshihisa Suzuki , Shingo Sakakibara
- Applicant Address: JP Shizuoka-Ken
- Assignee: Yamaha Corporation
- Current Assignee: Yamaha Corporation
- Current Assignee Address: JP Shizuoka-Ken
- Agency: Dickstein Shapiro LLP
- Priority: JPP2005-351653 20051206; JPP2005-351654 20051206; JPP2005-376393 20051227; JPP2006-296013 20061031
- Main IPC: H01L23/12
- IPC: H01L23/12
Abstract:
A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned.
Public/Granted literature
- US20070176272A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2007-08-02
Information query
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