Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11699077Application Date: 2007-01-29
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Publication No.: US07646094B2Publication Date: 2010-01-12
- Inventor: Shinji Suminoe
- Applicant: Shinji Suminoe
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2006-023306 20060131
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A semiconductor device (10) includes: a substrate (1), including an electrode pad (1a); an IC chip (4), mounted on the substrate (1); and an externally connecting terminal (7), formed on the electrode pad (1a) and electrically connected with the IC chip (4), the externally connecting terminal (7) including a resin core (7a) made of an elastic material and including a metal layer (7b) formed outside the resin core (7a), thereby providing a semiconductor device having high packaging reliability.
Public/Granted literature
- US20070194418A1 Semiconductor device Public/Granted day:2007-08-23
Information query
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