Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US10946372Application Date: 2004-09-21
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Publication No.: US07646095B2Publication Date: 2010-01-12
- Inventor: Kazushi Higashi , Kouichi Yoshida , Shinji Ishitani , Daido Komyoji
- Applicant: Kazushi Higashi , Kouichi Yoshida , Shinji Ishitani , Daido Komyoji
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Priority: JP2003-340456 20030930
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/40

Abstract:
In a semiconductor device of the present invention, in order that the contact of electrodes formed on a film substrate with edge parts of a semiconductor element at the time such as when the semiconductor element is mounted thereon may be reliably prevented, in the semiconductor element mounted on at least one surface of the film substrate having the electrodes, an insulating protection part is formed at a desired position of the surface opposed to the electrodes, and the distance between the semiconductor element and the film substrate is set at not less than 10 μm.
Public/Granted literature
- US20050104173A1 Semiconductor device and manufacturing method thereof Public/Granted day:2005-05-19
Information query
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