Invention Grant
- Patent Title: Semiconductor device with penetrating electrode
- Patent Title (中): 具有穿透电极的半导体器件
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Application No.: US11260682Application Date: 2005-10-28
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Publication No.: US07646100B2Publication Date: 2010-01-12
- Inventor: Kojiro Kameyama , Akira Suzuki , Mitsuo Umemoto
- Applicant: Kojiro Kameyama , Akira Suzuki , Mitsuo Umemoto
- Applicant Address: JP Osaka JP Gunma
- Assignee: Sanyo Electric Co., Ltd.,Kanto Sanyo Semiconductors Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.,Kanto Sanyo Semiconductors Co., Ltd.
- Current Assignee Address: JP Osaka JP Gunma
- Agency: Morrison & Foerster LLP
- Priority: JP2004-313733 20041028
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The first pad electrode layer is disposed on the surface of the semiconductor substrate with the first insulating film between them. Then, the second insulating film with the first via hole partially exposing the first pad electrode layer is formed over the first pad electrode layer. The plug is formed in the first via hole in the next process. The second pad electrode layer connected to the plug is disposed on the second insulating film. Next, the second via hole reaching to the first pad electrode layer from the backside of the semiconductor substrate is formed. The penetrating electrode and the second wiring layer connected to the first pad electrode layer at the bottom part of the second via hole are disposed. Furthermore, the protecting layer and the conductive terminal are formed. Finally, the semiconductor substrate is diced into the semiconductor chips.
Public/Granted literature
- US20060108691A1 Semiconductor device and manufacturing method of the same Public/Granted day:2006-05-25
Information query
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