Invention Grant
- Patent Title: Structured semiconductor element for reducing charging effects
- Patent Title (中): 用于减少充电效应的结构化半导体元件
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Application No.: US11314538Application Date: 2005-12-20
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Publication No.: US07646104B2Publication Date: 2010-01-12
- Inventor: Rolf-Peter Vollertsen
- Applicant: Rolf-Peter Vollertsen
- Applicant Address: DE Munich
- Assignee: Infineon Technologies A.G.
- Current Assignee: Infineon Technologies A.G.
- Current Assignee Address: DE Munich
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: H01L23/485
- IPC: H01L23/485

Abstract:
A semiconductor circuit element for reducing undesirable charging effects for a connection element of test structures for semiconductor circuits is disclosed. A surface of a semiconductor circuit element has interconnect structures that are electrically insulated from the remainder of the surface of the semiconductor circuit element, where exclusively the interconnect structures are connected to semiconductor circuit elements arranged downstream.
Public/Granted literature
- US20060097253A1 Structured semiconductor element for reducing charging effects Public/Granted day:2006-05-11
Information query
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