Invention Grant
- Patent Title: Stress measurement device and stress measurement method
- Patent Title (中): 应力测量装置和应力测量方法
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Application No.: US11727152Application Date: 2007-03-23
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Publication No.: US07646190B2Publication Date: 2010-01-12
- Inventor: Kentaro Mizuno , Shoji Hashimoto , Hidenori Moriya , Hiromichi Yasuda
- Applicant: Kentaro Mizuno , Shoji Hashimoto , Hidenori Moriya , Hiromichi Yasuda
- Applicant Address: JP Toyota
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-087646 20060328
- Main IPC: G01N19/00
- IPC: G01N19/00

Abstract:
A stress measurement device includes a current supply portion; a series circuit which is connected to the current supply portion and has a piezoresistive element that forms a single gauge resistance and a compensating diode that is connected in series to the piezoresistive element; and a voltage measuring portion that measures voltage between both ends of the series circuit. The single gauge resistance has a piezoresistive effect in which a resistance value changes according to applied stress, and a positive temperature characteristic in which the resistance value increases depending on an increase in temperature. The compensating diode is provided in a forward direction with respect to the current supply portion and has a negative temperature characteristic in which a voltage between an anode and a cathode of the compensating diode decreases depending on the increase in temperature.
Public/Granted literature
- US20070240518A1 Stress measurement device and stress measurement method Public/Granted day:2007-10-18
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