Invention Grant
- Patent Title: Semiconductor device for generating power on reset signal
- Patent Title (中): 用于产生上电复位信号的半导体器件
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Application No.: US11376416Application Date: 2006-03-16
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Publication No.: US07646222B2Publication Date: 2010-01-12
- Inventor: Masaki Ichikawa , Kazushige Kanda
- Applicant: Masaki Ichikawa , Kazushige Kanda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-077802 20050317
- Main IPC: H03L7/00
- IPC: H03L7/00

Abstract:
A reference voltage generating circuit receives a power supply voltage and generates a reference voltage. A reference voltage level guarantee circuit generates a sense signal when the circuit senses that a value of the reference voltage has reached a predetermined value. A power supply voltage sensing circuit has a voltage comparator circuit which compares a voltage obtained by dividing a power supply voltage with the reference voltage and outputs a power ON reset signal. An operation of the voltage comparator circuit is controlled based on a sense signal. When the value of the power supply voltage increases and the value of the reference voltage reaches a predetermined value, the voltage comparator circuit operates, and a power ON reset signal is outputted in response to a result of comparison between a divisional voltage and the reference voltage.
Public/Granted literature
- US20060208777A1 Semiconductor device for generating power on reset signal Public/Granted day:2006-09-21
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