Invention Grant
- Patent Title: Level shifting circuit having junction field effect transistors
- Patent Title (中): 具有结场效应晶体管的电平移动电路
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Application No.: US11495908Application Date: 2006-07-28
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Publication No.: US07646233B2Publication Date: 2010-01-12
- Inventor: Damodar R. Thummalapally , Richard K. Chou
- Applicant: Damodar R. Thummalapally , Richard K. Chou
- Applicant Address: US CA Los Gatos
- Assignee: DSM Solutions, Inc.
- Current Assignee: DSM Solutions, Inc.
- Current Assignee Address: US CA Los Gatos
- Agency: Haverstock & Owens, LLP
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
A level shifting circuit can include a first driver junction field effect transistor (JFET) having a source coupled to a reference supply node and a second driver JFET of a second conductivity type having a source coupled to a boosted supply node, and a first charge pump circuit. The first charge pump circuit can be coupled between the first driver control node and an input node coupled to receive an input signal, and can couple a first terminal of a first capacitor between a reference supply node and a power supply node in response to an input signal. The power supply node can be coupled to receive a power supply potential, the reference supply node can be coupled to receive a reference potential, and the boosted power supply node can be coupled to receive a boosted potential. The reference potential can be between the power supply potential and the boosted potential.
Public/Granted literature
- US20070262806A1 Level shifting circuit having junction field effect transistors Public/Granted day:2007-11-15
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