Invention Grant
- Patent Title: Electro-optical display device having thin film transistors including a gate insulating film containing fluorine
- Patent Title (中): 具有薄膜晶体管的电光显示器件包括含有氟的栅极绝缘膜
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Application No.: US09961055Application Date: 2001-09-24
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Publication No.: US07646441B2Publication Date: 2010-01-12
- Inventor: Masaaki Hiroki , Akira Mase
- Applicant: Masaaki Hiroki , Akira Mase
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP3-77317 19910216; JP3-77320 19910216; JP3-77321 19910216; JP3-87776 19910327; JP3-89540 19910327
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/1333

Abstract:
An electro-optical display device comprising a first substrate having an insulating surface, at least one thin film transistor formed over the first substrate, the thin film transistor comprising a channel region, source and drain regions with the channel region extending in between, a gate insulating film adjacent to the channel region, and a gate electrode adjacent to the gate insulating film, a pixel electrode formed over a leveling film or over an interlayer insulating film and electrically connected to one of the source and drain regions of the thin film transistor, and color filters or black stripes comprising a resin formed over a second substrate. A leveling film may be formed over the at least one thin film transistor, the color filters or the black stripes. The device may comprise a second leveling film or a common electrode.
Public/Granted literature
- US20020033906A1 Electro-optical device Public/Granted day:2002-03-21
Information query
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