A method for repairing a storage capacitor on gate or a storage capacitor on common line is described. A portion of each pixel electrode is disposed above a scan line or a common line. An upper electrode is disposed between the pixel electrode and the corresponding scan line or the common line. The pixel electrode and the upper electrode are electrically connected. A defective capacitor is formed when a particle/defect is produced between the upper electrode and the common line or the scan line. The method of repairing the defective capacitor includes removing a portion of the pixel electrode corresponding to the upper electrode of a defective storage capacitor and electrically isolating the upper electrode and the corresponding pixel electrode of the defective storage capacitor. The upper electrode and the scan line or the common line of the defective capacitor are welded together.