Invention Grant
- Patent Title: Lithographic processing cell and device manufacturing method
- Patent Title (中): 平版印刷加工电池及器件制造方法
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Application No.: US11396915Application Date: 2006-04-04
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Publication No.: US07646468B2Publication Date: 2010-01-12
- Inventor: Stefan Geerte Kruijswijk
- Applicant: Stefan Geerte Kruijswijk
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G03B27/52
- IPC: G03B27/52 ; H01L21/302

Abstract:
A double processing technique for device manufacture includes performing a first patterning step to form apertures in a resist layer which apertures are filled before the first resist layer is stripped and replaced by a second resist layer to be used in the second exposure.
Public/Granted literature
- US20070229828A1 Lithographic processing cell and device manufacturing method Public/Granted day:2007-10-04
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