Invention Grant
US07646580B2 Electrostatic chuck and wafer holding member and wafer treatment method
有权
静电卡盘和晶片保持件和晶片处理方法
- Patent Title: Electrostatic chuck and wafer holding member and wafer treatment method
- Patent Title (中): 静电卡盘和晶片保持件和晶片处理方法
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Application No.: US11361679Application Date: 2006-02-24
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Publication No.: US07646580B2Publication Date: 2010-01-12
- Inventor: Tsunehiko Nakamura , Yasushi Migita
- Applicant: Tsunehiko Nakamura , Yasushi Migita
- Applicant Address: JP Kyoto
- Assignee: Kyocera Corporation
- Current Assignee: Kyocera Corporation
- Current Assignee Address: JP Kyoto
- Agency: Hogan & Hartson LLP
- Priority: JP2005-049810 20050224
- Main IPC: H01L21/683
- IPC: H01L21/683

Abstract:
It is an object of the present invention to provide an electrostatic chuck which has a good separation response and scarcely causes gas leakage while keeping the uniformly heating property and high attracting capability for a substrate and a treatment apparatus using the chuck.To solve the above object, an electrostatic chuck according to the present invention comprises a plate-shaped ceramic body in which one main face is a setting face to put an object to be held, the plate-shaped ceramic body having; an electrode on the other main face or inside for electrostatic attraction: a circular projected part formed in the outer circumferential rim part of the setting face, the circular projected part being brought into contact with the object: and through holes formed in the inside of the circular projected part and in the electrostatic, wherein Ra(max) and Ra(min) which denote a maximum value and a minimum value of the arithmetic mean deviation Ra of the face to be brought into contact with the object respectively satisfy {Ra(max)·Ra(min)}/Ra(max)≦0.2.
Public/Granted literature
- US20060209490A1 Electrostatic chuck and wafer holding member and wafer treatment method Public/Granted day:2006-09-21
Information query
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