Invention Grant
- Patent Title: Common centroid symmetric structure capacitor
- Patent Title (中): 普通质心对称结构电容器
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Application No.: US11806756Application Date: 2007-06-04
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Publication No.: US07646583B2Publication Date: 2010-01-12
- Inventor: Szu-Kang Hsien , I-Hsun Chen , Chien-Hua Cheng
- Applicant: Szu-Kang Hsien , I-Hsun Chen , Chien-Hua Cheng
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Rabin & Berdo, P.C.
- Priority: TW95150060A 20061229
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/38 ; H01L27/108 ; H01L29/94

Abstract:
A common centroid symmetric structure capacitor is provided, which includes a first metal layer, a second metal layer, a third metal layer, and a fourth metal layer. The first metal layer is adjacent to the second metal layer, the third metal layer is adjacent to the first metal layer, the fourth metal layer is adjacent to the second metal layer, and the first metal layer is symmetric to the fourth metal layer, the second metal layer is symmetric to the third metal layer. Each of the metal layers has two sets of metal wires, each set has a plurality of metal wires, and each of the metal wires in each set is arranged in an interlaced manner.
Public/Granted literature
- US20080158772A1 Common centroid symmetric structure capacitor Public/Granted day:2008-07-03
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