Invention Grant
- Patent Title: Method of selecting operating characteristics of a resistive memory device
- Patent Title (中): 选择电阻式存储器件的工作特性的方法
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Application No.: US11590378Application Date: 2006-10-31
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Publication No.: US07646624B2Publication Date: 2010-01-12
- Inventor: Tzu-Ning Fang , Swaroop Kaza , An Chen , Sameer Haddad
- Applicant: Tzu-Ning Fang , Swaroop Kaza , An Chen , Sameer Haddad
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In a method of providing an operating characteristic of a resistive memory device, material of an electrode thereof is selected to in turn provide a selected operating characteristic of the device. The material of the electrode may be reacted with material of an insulating layer of the resistive memory device to form a reaction layer, the selected operating characteristic being dependent on the presence of the reaction layer.
Public/Granted literature
- US20080112206A1 Method of selecting operating characteristics of a resistive memory device Public/Granted day:2008-05-15
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