Invention Grant
- Patent Title: Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
- Patent Title (中): 具有改善的读干扰抑制和热干扰电阻的磁随机存取存储器
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Application No.: US11802010Application Date: 2007-05-18
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Publication No.: US07646627B2Publication Date: 2010-01-12
- Inventor: Hideto Hidaka
- Applicant: Hideto Hidaka
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-139013 20060518
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Between the value of an electric current and the supply duration for which the electric current is supplied that cause magnetization reversal, there is the relation of monotonous decrease. This means that, as the supply duration is shortened, the threshold current value for causing the magnetization reversal is larger. Therefore, in terms of suppressing occurrence of read disturb, the read current supply duration may be shortened to increase the threshold value of the current causing the magnetization reversal and thereby ensure a sufficient read disturb margin. Therefore, the read current supply duration may be shortened relative to the write current supply duration ensure the read disturb margin and suppress occurrence of read disturb.
Public/Granted literature
- US20070268737A1 Nonvolatile memory device Public/Granted day:2007-11-22
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