Invention Grant
US07646633B2 Method for programming phase-change memory and method for reading date from the same 失效
编程相变存储器的方法和从其读取日期的方法

  • Patent Title: Method for programming phase-change memory and method for reading date from the same
  • Patent Title (中): 编程相变存储器的方法和从其读取日期的方法
  • Application No.: US12038547
    Application Date: 2008-02-27
  • Publication No.: US07646633B2
    Publication Date: 2010-01-12
  • Inventor: Yukio Fuji
  • Applicant: Yukio Fuji
  • Applicant Address: JP Tokyo
  • Assignee: Elpida Memory, Inc.
  • Current Assignee: Elpida Memory, Inc.
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2007-052787 20070302
  • Main IPC: G11C11/00
  • IPC: G11C11/00
Method for programming phase-change memory and method for reading date from the same
Abstract:
When a phase-change element that can transition between a reset state (amorphous state) and a set state (crystalline state) is to be caused to transition to the reset state, a first pulse having a first voltage is applied to the phase-change element. The first voltage is higher than the threshold voltage in the reset state, and can cause current to flow that corresponds to an amount of generated heat required for placing the element in the reset state. When the phase-change element is to be caused to transition to the set state, a second pulse having a second voltage and the same time width as the first pulse is applied to the phase-change element. The second voltage that is higher than the threshold voltage but lower than the first voltage, and can cause only a current to flow that does not attain the necessary amount of generated heat.
Information query
Patent Agency Ranking
0/0