Invention Grant
- Patent Title: Data reading circuit of toggle magnetic memory
- Patent Title (中): 切换磁存储器的数据读取电路
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Application No.: US11966317Application Date: 2007-12-28
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Publication No.: US07646635B2Publication Date: 2010-01-12
- Inventor: Young-Shying Chen , Ding-Yeong Wang
- Applicant: Young-Shying Chen , Ding-Yeong Wang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Workman Nydegger
- Priority: TW96124052A 20070702
- Main IPC: G11C11/14
- IPC: G11C11/14

Abstract:
A data reading circuit of a magnetic memory applicable for reading data of a magnetic memory includes a first transistor, a second transistor connected to the first transistor in series, a third transistor, a fourth transistor connected to the third transistor in series, a first transmission gate electrically connected to the first transistor, a second transmission gate electrically connected to the first and third transistors, a comparison circuit having two input ends respectively connected to the first transistor, and a storage capacitor having an end electrically connected to the first transistor and the other end connected to a power end.
Public/Granted literature
- US20090010088A1 DATA READING CIRCUIT OF TOGGLE MAGNETIC MEMORY Public/Granted day:2009-01-08
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