Invention Grant
US07646639B2 Circuit and method generating program voltage for non-volatile memory device
有权
用于非易失性存储器件的电路和方法产生编程电压
- Patent Title: Circuit and method generating program voltage for non-volatile memory device
- Patent Title (中): 用于非易失性存储器件的电路和方法产生编程电压
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Application No.: US11844514Application Date: 2007-08-24
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Publication No.: US07646639B2Publication Date: 2010-01-12
- Inventor: Jin-wook Lee , Jin-Yub Lee
- Applicant: Jin-wook Lee , Jin-Yub Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0098643 20061010
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Provided are a circuit and method for generating a program voltage, and a non-volatile memory device using the same. The circuit, which generates a program voltage for programming a memory cell of a semiconductor memory device, includes a program voltage controller and a voltage generating unit. The program voltage controller generates a program voltage control signal according to program/erase operations information. The voltage controller generates a program voltage in response to the program voltage control signal.
Public/Granted literature
- US20080084749A1 CIRCUIT AND METHOD GENERATING PROGRAM VOLTAGE FOR NON-VOLATILE MEMORY DEVICE Public/Granted day:2008-04-10
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