Invention Grant
US07646644B2 Nonvolatile memory device with multiple references and corresponding control method
有权
具有多个参考的非易失性存储器件和相应的控制方法
- Patent Title: Nonvolatile memory device with multiple references and corresponding control method
- Patent Title (中): 具有多个参考的非易失性存储器件和相应的控制方法
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Application No.: US11460531Application Date: 2006-07-27
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Publication No.: US07646644B2Publication Date: 2010-01-12
- Inventor: Efrem Bolandrina , Daniele Vimercati , Corrado Villa
- Applicant: Efrem Bolandrina , Daniele Vimercati , Corrado Villa
- Agency: Schwabe Williamson & Wyatt
- Priority: EP05425564 20050729
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C7/14
Abstract:
A memory device includes a group of memory cells organized in rows and columns and a first addressing circuit for addressing said memory cells of said group on the basis of a cell address. The device further includes a plurality of sets of reference cells, associated to the group, each of said set having a plurality of reference cells, and a second addressing circuit for addressing one of the reference cells during operations of read and verify of addressed memory cells.
Public/Granted literature
- US20070036014A1 NONVOLATILE MEMORY DEVICE WITH MULTIPLE REFERENCES AND CORRESPONDING CONTROL METHOD Public/Granted day:2007-02-15
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