Invention Grant
US07646653B2 Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
有权
用于集成电路器件的驱动器电路，其可操作以减小晶体管中的栅极感应漏极泄漏（GIDL）电流及其操作方法
- Patent Title: Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
- Patent Title (中): 用于集成电路器件的驱动器电路，其可操作以减小晶体管中的栅极感应漏极泄漏（GIDL）电流及其操作方法
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Application No.: US11704740Application Date: 2007-02-09
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Publication No.: US07646653B2Publication Date: 2010-01-12
- Inventor: Jong-Hyun Choi , Kyu-Chan Lee , Sung-Min Yim , Dong-Hak Shin
- Applicant: Jong-Hyun Choi , Kyu-Chan Lee , Sung-Min Yim , Dong-Hak Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2006-0073103 20060802
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C8/00
Abstract:
A driver circuit for an integrated circuit device includes a transistor that has a gate terminal, a source terminal, and a bulk substrate terminal. The source terminal is connected to the bulk substrate terminal. A pull-up circuit is connected between a power supply node and the source terminal. The pull up circuit is configured to increase a voltage at the source terminal and the bulk substrate terminal of the transistor responsive to a control signal.
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